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FR156 DM412 TLH4900 FM4007 0M0000 55GN01C ST13003 2M22Z
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 UTC BCP68
NPN EPITAXIAL SILICON TRANSISTOR
NPN MEDIUM POWER TRANSISTOR
FEATURES
* High current (max. 1 A) * Low voltage (max. 20 V) * Complementary to UTC BCP69
APPLICATIONS
* General purpose switching and amplification under high current conditions.
1
SOT-223
1: BASE
2: COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta = 25)
PARAMETER
Collector-Base Voltage (Open Emitter) Collector-Emitter Voltage(Open Base) Emitter-Base Voltage(Open Collector) Collector Current (DC) Peak Collector Current Peak Base Current Total Power Dissipation, Ta 25 Operating Ambient Temperature Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO IC ICM IBM Ptot Ta Tj Tstg
RATINGS
32 20 5 1 2 200 1.37 -65 ~ +150 150 -65 ~ +150
UNIT
V V V A A mA W
THERMAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT
Thermal Resistance From Junction To Ambient Rth j-a Note 1 91 K/W Thermal Resistance From Junction To Soldering Point Rth j-s 10 K/W Note 1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook".
UTC
UNISONIC TECHNOLOGIES
CO. LTD
1
QW-R207-008,B
UTC BCP68
PARAMETER
Collector Cut-off Current Emitter Cut-off Current DC Current Gain
NPN EPITAXIAL SILICON TRANSISTOR
SYMBOL
ICBO IEBO hFE
ELECTRICAL CHARACTERISTICS (Tj = 25, unless otherwise specified.)
TEST CONDITIONS
IE = 0, VCB = 25V IE = 0, VCB = 25V, Tj = 150 IC = 0, VEB =5V IC = 5mA, VCE = 10V IC = 500mA, VCE = 1V IC = 1A, VCE = 1V IC = 500mA, VCE = 1V IC = 1A, IB = 100mA IC = 5mA, VCE = 10V IC = 1A, VCE = 1V IE = ie = 0, VCB = 5V, f = 1MHz IC = 10mA, VCE = 5V, f = 100MHz |IC| = 0.5A, |VCE| = 1V 40 1.6 38 50 85 60 160 620 1 375 375 500
MIN
TYP
MAX
100 10 100
UNIT
nA A nA
DC Current Gain (BCP68-25) Collector-Emitter Saturation Voltage Base-Emitter Voltage Collector Capacitance Transition Frequency DC current gain ratio of the complementary pairs VCEsat VBE CC fT hFE1 hFE2
mV mV V pF MHz
DC current gain (typical values)
300 VCE = 1V
250
200
hFE
150
100
50
0 -1 -10
1
10 IC (mA)
102
103
104
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R207-008,B


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